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| PNP Silicon AF and Switching Transistors For general AF applications q High breakdown voltage q Low collector-emitter saturation voltage q Complementary types: BCX 41, BSS 64 (NPN) q BCX 42 BSS 63 Type BCX 42 BSS 63 Marking DKs BMs Ordering Code (tape and reel) Q62702-C1485 Q62702-S534 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 79 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient 2) Junction - soldering point Rth JA Rth JS Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 100 110 5 Values BSS 63 BCX 42 125 125 5 800 1 100 200 330 150 - 65 ... + 150 Unit V mA A mA mW C 285 215 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BCX 42 BSS 63 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCX 42 BSS 63 Collector-base breakdown voltage1) IC = 100 A BCX 42 BSS 63 Emitter-base breakdown voltage, IE = 10 A Collector cutoff current VCB = 80 V VCB = 100 V VCB = 80 V, TA = 150 C VCB = 100 V, TA = 150 C Collector cutoff current VCE = 100 V TA = 85 C TA = 125 C Emitter cutoff current, VEB = 4 V DC current gain1) IC = 100 A, VCE = 1 V IC = 10 mA, VCE = 5 V IC = 20 mA, VCE = 5 V IC = 100 mA, VCE = 1 V IC = 200 mA, VCE = 1 V BCX 42 BSS 63 BSS 63 BCX 42 BCX 42 VCEsat - - - VBEsat - - - - - 0.9 0.25 0.9 1.4 BSS 63 BCX 42 BSS 63 BCX 42 ICE0 BCX 42 BCX 42 IEB0 hFE 25 30 30 63 40 - - - - - - - - - - V - - - - - - 10 75 100 nA - V(BR)CE0 125 100 V(BR)CB0 125 110 V(BR)EB0 ICB0 - - - - - - - - 100 100 20 20 nA nA A A A Values typ. max. Unit V - - - - - - - - - - 5 Collector-emitter saturation voltage1) IC = 300 mA, IB = 30 mA BCX 42 IC = 25 mA, IB = 2.5 mA BSS 63 IC = 75 mA, IB = 7.5 mA BSS 63 Base-emitter saturation voltage1) IC = 300 mA, IB = 30 mA BCX 42 AC characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 20 MHz Output capacitance VCB = 10 V, f = 1 MHz 1) fT Cobo - - 150 12 - - MHz pF Pulse test: t 300 s, D = 2 % Semiconductor Group 2 BCX 42 BSS 63 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector current IC = f (VBE) VCE = 1 V Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 5 V Semiconductor Group 3 BCX 42 BSS 63 Base-emitter saturation voltage IC = f (VBEsat) hFE = 10 Collector-emitter saturation voltage IC = f (VCEsat) hFE = 10 Collector cutoff current ICB0 = f (TA) VCB = VCEmax DC current gain hFE = f (IC) VCE = 1 V Semiconductor Group 4 |
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